wangfq 87c8e01936 test(vd960DBN): SPI写密度模拟实验 + factory写止血 — VDD跌落诊断 ...

- peripheral_main: sim_snap_spi 模拟快照落盘节奏 (20ms 64B页写 + 每64条切扇区擦除+头写)
- cfig_flash: magic不匹配时跳过 factory SPI_Flash_Write, 用内存默认值继续
  (SPI写触发硬件复位死循环止血: 参数区0x00写也崩, RST=0x00000000)
- 诊断修正: CH32V208GBU6 QFN28 无 NRST 引脚, 共线假设作废;
  SPI写/擦除→电流尖峰→VDD跌落→内部POR/PDR(2.4V)复位;
  BLE射频+SPI电流叠加是头号嫌疑

2026-08-13 11:27:08 +08:00

..

APP

test(vd960DBN): SPI写密度模拟实验 + factory写止血 — VDD跌落诊断

2026-08-13 11:27:08 +08:00

Ld

refactor(vd960Loop): 算法回退到 DLD154V4B，四通道适配

2026-06-25 16:21:57 +08:00

MQTT_SRC

refactor(vd960Loop): 算法回退到 DLD154V4B，四通道适配

2026-06-25 16:21:57 +08:00

Profile

refactor(vd960Loop): 算法回退到 DLD154V4B，四通道适配

2026-06-25 16:21:57 +08:00

Startup

refactor(vd960Loop): 算法回退到 DLD154V4B，四通道适配

2026-06-25 16:21:57 +08:00